Semiconductor device having thin film resistor protected...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S537000, C257S350000, C257S351000, C257S358000, C257S360000, C257S363000, C257S379000

Reexamination Certificate

active

10848384

ABSTRACT:
A semiconductor device, a method for manufacturing the semiconductor device, and an integrated circuit including the semiconductor device are disclosed. The semiconductor device includes a substrate section, a resistor formed on the substrate section, a metal pattern formed on the resistor, an oxide pattern formed on the metal pattern, and a protective film covering the resistor, the metal pattern and the oxide pattern. With this structure, the metal pattern sufficiently prevents formation of an oxide film on a surface of the resistor even when dry ashing or dry etching is performed in the manufacturing process.

REFERENCES:
patent: 5525834 (1996-06-01), Fischer et al.
patent: 5592006 (1997-01-01), Merrill
patent: 6532027 (2003-03-01), Ozaki et al.
patent: 6642585 (2003-11-01), Ohuchi et al.
patent: 6888232 (2005-05-01), Eldridge et al.
patent: 07-202124 (1995-08-01), None
patent: 11-044485 (1999-02-01), None
patent: 11-142527 (1999-05-01), None
patent: 2001-110895 (2001-04-01), None
patent: 2002-094075 (2002-03-01), None
patent: 1020010047930 (2002-02-01), None

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