Method and apparatus for determining the temperature of a...

Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Semiconductors for nonelectrical property

Reexamination Certificate

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C324S1540PB, C324S685000, C324S721000, C324S760020, C327S083000, C327S371000, C327S512000, C374S172000, C374S178000

Reexamination Certificate

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11085828

ABSTRACT:
Method and system for periodically measuring the junction temperature of a semiconductor device. The junction is excited by at least two sequential predetermined currents of different magnitudes. The voltage response of the junction to the at least two currents is measured and the temperature of the junction is calculated, while substantially canceling ohmic effects, by using the voltage response and a correction factor. Whenever desired, the junction is excited by a set of at least four sequential different currents having known ratios. The voltage response to the set is measured and the correction factor is calculated by using each voltage response to the set.

REFERENCES:
patent: 4052744 (1977-10-01), Boothman et al.
patent: 4150433 (1979-04-01), Kaniel
patent: 6008685 (1999-12-01), Kunst
patent: 6452454 (2002-09-01), Shapiro et al.
patent: 6554469 (2003-04-01), Thomson et al.
patent: 6612738 (2003-09-01), Beer et al.

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