Solid state image sensor

Details Solid state image sensor Solid state image sensor

2007-03-06

2007-03-06

Ometz, David (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S301000

Reexamination Certificate

active

10087824

ABSTRACT:
In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.

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Specifications and Drawings for U.S. Appl. No. 09/038,903, Filing Date: Mar. 12, 1998, “Physical Quantity Distribution Sensor, Method of Driving Said Sensor and Method of Producing Said Sensor”, Inventors: Kuroda Takao et al.

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