Semiconductor memory device which stores plural data in a cell

Details Semiconductor memory device which stores plural data in a cell Semiconductor memory device which stores plural data in a cell

2007-07-17

2007-07-17

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185190, C365S185220, C365S185240, C365S185250

Reexamination Certificate

active

10988592

ABSTRACT:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k<=n) in a write operation, precharges the bit line once, and then changes the potential of the word line an i number of times to verify whether the memory cell has reached an i-valued (i<=k) threshold voltage.

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