Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-04-10
2007-04-10
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S057000, C257S643000, C438S099000
Reexamination Certificate
active
10517529
ABSTRACT:
An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrode101on the surface of a substrate102, providing thereon a gate insulating layer103, providing on the surface of the gate insulating layer103an island-shaped protrusion layer104having dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layer104a source electrode106and a drain electrode107with a distance therebetween, providing thereon an organic semiconductor layer105in contact with the island-shaped protrusion layer104and both electrodes106and107, and further providing a protective film108on the organic semiconductor layer105.
REFERENCES:
patent: 5546889 (1996-08-01), Wakita et al.
patent: 5556706 (1996-09-01), Wakita et al.
patent: 5574291 (1996-11-01), Dodabalapur et al.
patent: 5596208 (1997-01-01), Dodabalapur et al.
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 6326640 (2001-12-01), Shi et al.
patent: 6783588 (2004-08-01), Aoto et al.
patent: 6946676 (2005-09-01), Kelley et al.
patent: 7-206599 (1995-08-01), None
patent: 9-232589 (1997-05-01), None
patent: 2001-94107 (2001-04-01), None
patent: 01/47045 (2001-06-01), None
Jackson, T. et al. Organic Thin-Film Transistors for Organic Light-Emitting Flat-Panel Display Backplanes; 1998; IEEE Journal of Selected Topics in Quantum Electronics; vol. 4, No. 1, p. 100-104.
Parikh, A. et al. An Intrinsic Relationship between Molecular Structure in Self-Assembled n-Alkylsiloxane Monolayers and Deposition Temperature; 1994; J. Phys. Chem. vol. 98, p. 7577-7590.
Bao, Z. et al. High-Performance Plastic TRansistors Fabricated by Printing Techniques; 1997; Chem. Mater. vol. 9, p. 1299-1301.
Sugimura, H. Micropatterning of Alkyl- and Fluoroalkylsilane Self-Assembled Monolayers Using Vacuum Ultraviolet Light; 2000, vol. 16, p. 885-888.
English translation of JP 2001-094107 A; Hitachi (Apr. 6, 2001).
Campbell, R. B, et al., “The Crystal and Molecular Structure of Pentacene”,Acta Cryst., vol. 14, (1961) pp. 705-711.
Lin, Y.-Y., et al. “Stacked Pentacene Layer Organic Thin-Film Transistors with Improved Characteristics”,IEEE Electron Device Letters, vol. 18, No. 12, (Dec. 1997) pp. 606-608.
Lin, Y.-Y., “Pentacene-Based Organic Thin-film Transistors”,IEEE Transactions on Electron Devices, vol. 44, No. 8, (Aug. 1997) pp. 1325-1331.
Klauk, et al., “Polymer Gate Dielectric Pentacene TFTs and Circuits on Flexible Substrates”, Infineon Technologies, (Dec. 2002) pp. 557 to 560.
Brown, et al., “A universal relation between conductivity and field-effect mobility in doped amorphous organic semiconductors”, Synthetic Metals, vol. 68, (1994) pp. 65-70.
Kitazaki, et al., “Extension of Fowkes' Equation and Estimation of Surface Tension of Polymer Solids” Adhesion Society of Japan, vol. 8, No. 3, (1972) pp. 131-142.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Ingham John
Weiss Howard
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