Focused ion beam metrology

Details Focused ion beam metrology Focused ion beam metrology

1996-05-28

1998-08-25

Anderson, Bruce

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, H01J 37317

Patent

active

057985294

ABSTRACT:
A focused ion beam metrology device and method are disclosed. A focused ion beam is used to measure dimensions of semiconductor features, such as top-down linewidth measurement. Low intensity focused ion beams form top view images of the semiconductor. High intensity focused ion beams etch the semiconductor in the presence of etch-enhancing material. A crater is etched to expose a cross-section the of semiconductor. The cross-section is imaged by directing low intensity focused ion beams toward the cross-section. This may be achieved by tilting the semiconductor. A three dimensional profile of a feature may be formed by successively etching the feature top surface and forming a top view image thereof. Overlaying the successive top view images forms the three dimensional profile.

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