Method of manufacturing integrated spin valve head

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S603130, C029S603150, C029S603180, C360S324100, C427S128000, C427S131000

Reexamination Certificate

active

11011995

ABSTRACT:
Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

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Ishi et al., “Anisotropic Control in Fabrication Process for NiMn Spin-Valve Duel Element Heads”, IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 1411-1413.
“Greater Than 14 Gb/in2Spin Valve Heads”, H.C. Tong et al, IEEE Trans. on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2574-2579.
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