Method for manufacturing magnetic head device

Details Method for manufacturing magnetic head device Method for manufacturing magnetic head device

2007-01-09

2007-01-09

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603070, C029S603140, C029S846000, C360S324200

Reexamination Certificate

active

11371244

ABSTRACT:
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

REFERENCES:
patent: 2683856 (1954-07-01), Kornei
patent: 3813692 (1974-05-01), Brock et al.
patent: 4012781 (1977-03-01), Lin
patent: 4040113 (1977-08-01), Gorter
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4142218 (1979-02-01), Gorter
patent: 4443826 (1984-04-01), Sawada et al.
patent: 4593332 (1986-06-01), Akiyama et al.
patent: 4639806 (1987-01-01), Kira et al.
patent: 4663685 (1987-05-01), Tsang
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4803580 (1989-02-01), Mowry
patent: 4825325 (1989-04-01), Howard
patent: 4881143 (1989-11-01), Bhattacharyya et al.
patent: 4894741 (1990-01-01), French
patent: 4896235 (1990-01-01), Takino et al.
patent: 4940511 (1990-07-01), Fontana, Jr. et al.
patent: 4949039 (1990-08-01), Gruenberg
patent: 4987509 (1991-01-01), Gill et al.
patent: 5014147 (1991-05-01), Parkin et al.
patent: 5027243 (1991-06-01), Gill et al.
patent: 5132859 (1992-07-01), Andricados et al.
patent: 5134533 (1992-07-01), Friedrich et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5216560 (1993-06-01), Brug et al.
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5726837 (1998-03-01), Nakatani et al.
patent: 6011674 (2000-01-01), Nakatani et al.
patent: 6278593 (2001-08-01), Nakatani et al.
patent: 6483677 (2002-11-01), Nakatani et al.
patent: 6687099 (2004-02-01), Nakatani et al.
patent: 51-44917 (1976-04-01), None
patent: 52-023925 (1977-02-01), None
patent: 53-17404 (1978-06-01), None
patent: 57-177573 (1982-11-01), None
patent: 58-004931 (1983-01-01), None
patent: 63-055714 (1988-03-01), None
patent: 01-213819 (1989-08-01), None
patent: 2-61572 (1990-03-01), None
Proceedings of the International Symposium on Physics of Magnetic Materials, Apr. 8-11, 1987, pp. 303-306, Suezawa et al.
Journal of Applied Physics, vol. 66(9), pp. 4338-4344, Nov. 1989, “Changes in Soft Magnetic Properties of Fe Multilayered Films due to Lattice Mismatches between Fe and Intermediate Layers”, Nakatani et al.
Physical Review Letters, vol. 61, No. 21, pp. 2472-2475 (1988), Baibich et al.
Physical Review B, vol. 39, No. 10, pp. 6995-7002, “Conductive and Exchange Coupling of Two Ferromagnets Separated by a Tunneling Barrier”, Apr. 1989, Slonczewski.
Pratt et al, “Giant Magnetoresistance with Current Perpendicular to the Layer Planes of Ag/Co and AgSn/Co Multilayers (invited)”, J. Appl. Phys., vol. 73, No. 10, May 15, 1993, pp. 5326-5331.
S. Maekawa et al, “Electron Tunneling Between Ferromagnetic Films”, IEEE Transactions on Magnetics, vol. MAG-18, no. 2, Mar. 1982, pp. 707-708.
Hirai, H. et al, “Josephson Device”, Ohm Corp., Feb. 28, 1978, pp. 121-122.
“Ferromagnetic Tunneling Junction”, vol. 15, No. 3, 1980, pp. 171-176, 198, and 781-782.

Affiliated with

Also associated with

Rating

Method for manufacturing magnetic head device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing magnetic head device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing magnetic head device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3743943