Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-04-03

2007-04-03

Tran, Michael (Department: 2827)

Static information storage and retrieval

Read only systems

C365S205000

Reexamination Certificate

active

11272818

ABSTRACT:
Selection signals output from a decoder are selectively set at High according to the states (blown or not blown) or fuses in bit cells in a cell group specifying circuit. Then, one of transistor gates is turned ON so that a data bit cell group in/from which data is written and read out is selected. Accordingly, stored data can be rewritten multiple times by sequentially blowing the fuses in the cell group specifying circuit.

REFERENCES:
patent: 5966339 (1999-10-01), Hsu et al.
patent: 6384664 (2002-05-01), Hellums et al.
patent: 6594181 (2003-07-01), Yamada
patent: 7002829 (2006-02-01), Singh et al.
patent: 2005/0067670 (2005-03-01), Hui
patent: 2006/0039201 (2006-02-01), Warner

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