Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-04-03
2007-04-03
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185280, C365S185330, C365S189050
Reexamination Certificate
active
11164612
ABSTRACT:
The present invention relates to a page buffer circuit with a reduced size, and a flash memory device having the page buffer circuit and program operation method thereof. According to the present invention, a page buffer circuit can perform a program operation of a Multi-Level Cell (MLC) using a data verify circuit even without a data compare circuit. Accordingly, an occupation area can be reduced and the size of a flash memory device can also be reduced.
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Seong Jin Yong
Won Sam Kyu
Hynix / Semiconductor Inc.
Mai Son L.
Marshall & Gerstein & Borun LLP
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