Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S751000, C257S762000, C257SE21174, C257SE23152

Reexamination Certificate

active

10888518

ABSTRACT:
A semiconductor device including a multilevel wiring with a small interwiring capacitance is provided by comprising a wiring, a conductive film formed on an upper surface of the wiring to prevent diffusion of a wiring material, and an insulating film which is constituted of low dielectric constant insulating films stacked to form at least two layers, an interface thereof being positioned in a side face of the wiring.

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