Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-05-29
2007-05-29
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S474000, C349S139000, C349S143000
Reexamination Certificate
active
09793103
ABSTRACT:
An array substrate for use in an X-ray sensing device and in an LCD device is fabricated using plasma gas treatment. Especially, an indium-tin-oxide (ITO) transparent conductive metallic layer is plasma-treated by N2plasma, He plasma or Ar plasma, before forming the insulation layer on the ITO transparent conductive metallic layer. Thus, the plasma removes the impurities on a surface of the transparent conductive metallic layer and changes the lattice structure of the surface of the transparent conductive metallic layer, and thus the adhesion between the transparent conductive metallic layer and the insulation layer is improved. The defects caused by a gap or a space between the transparent conductive metallic layer and the insulation layer do not occur.
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Derwent-ACC-No.: 2001-600582 “Method for forming pixel electrode of liquid crystal display device”, Hwang, G J, LG Philips LCD CO LTD [GLDS].
LG.Philips LCD Co. Ltd
Nguyen Khiem
Smith Matthew
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