Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2007-05-01
2007-05-01
Patel, Paresh (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S1540PB
Reexamination Certificate
active
10935375
ABSTRACT:
Methods and systems are provided for characterizing the negative temperature bias instability of a transistor. A bias voltage is maintained at a drain terminal of the transistor during a test period. A stress voltage is maintained at a gate terminal of the transistor during the test period, such that the stress voltage is applied concurrently with the bias voltage. At least one characteristic of the transistor is measured at periodic intervals during the stress period to determine a degradation of the at least one characteristic caused by the stress voltage until a termination event occurs.
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Chancellor Cathy
Krishnan Anand T.
Krishnan Srikanth
Reddy Vijay
Brady W. James
Keagy Rose Alyssa
Patel Paresh
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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