Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-03-20
2007-03-20
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE21665, C365S173000
Reexamination Certificate
active
11179029
ABSTRACT:
An array of conductive lines for MRAM circuits wherein at least one set of mutually parallel conductive traces is tilted with respect to being perpendicular with a corresponding set of mutually parallel conductive traces wherein individual conductive traces within the sets intersect adjacent individual MRAM cells and wherein the tilting of the at least one set of conductive traces acts to induce both a vertical and horizontal component of a magnetic field such that the net vector addition of magnetic fields induced by the sets of conductive traces is greater than the untilted or perpendicular configuration so as to induce a greater net magnetic field to effect more reliable switching of the underlying MRAM cells. The tilted array also enables reducing the current supplied by the conductive traces while maintaining a comparable net magnetic field to the untilted configuration.
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Pohm et al.; “Experimental and Analytical Properties of 0.2 Micron Wide, Multi-Layer, GMR, Memory Elements”; IEEE Transactions on Magnetics, vol. 32, No. 5; Sep. 5, 1996.
Huynh Andy
Knobbe Martens Olson & Bear LLP
Taylor Earl
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