Method of producing p-n junction type elements by ionized cluste

Details Method of producing p-n junction type elements by ionized cluste Method of producing p-n junction type elements by ionized cluste

1976-12-28

1978-10-17

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 357 20, 357 91, H01L 21265, H01L 754

Patent

active

041207009

ABSTRACT:
A p-n junction type solid-state element having a substrate, a substrate electrode coated on the substrate, a p-n junction type semiconductor layer coated on the substrate having the substrate electrode thereon, and an upper terminal electrode coated on the p-n junction type semiconductor layer; in which the p-n junction type semiconductor layer is formd by coating an n-type (or p-type) semiconductor layer on the substrate having the substrate electrode thereon by the ion-plating method and then by forming a p-type (or n-type) semiconductor layer in the upper surface region of the n-type (or p-type) seminconductor layer by the ion-implantation method.

REFERENCES:
patent: 3433677 (1969-03-01), Robinson
patent: 3520741 (1970-07-01), Mankarious
patent: 3551213 (1970-12-01), Boyle
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 3912826 (1975-10-01), Kennedy
patent: 4066527 (1978-01-01), Takagi et al.
T. Takagi et al., "Ionized Cluster Beam Deposition", in Ion Implantation in Semiconductors, ed. S. Namba, Plenum; New York, 1974, p. 341.

Affiliated with

Also associated with

Rating

Method of producing p-n junction type elements by ionized cluste does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing p-n junction type elements by ionized cluste, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing p-n junction type elements by ionized cluste will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-373761