Nonvolatile memory using a two-step cell verification process

Details Nonvolatile memory using a two-step cell verification process Nonvolatile memory using a two-step cell verification process

2007-04-03

2007-04-03

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185240

Reexamination Certificate

active

11141145

ABSTRACT:
A nonvolatile memory comprises a plurality of memory cells, a bit line control circuit and a verifying circuit. The bit line control circuit includes a driving circuit and a non-driving circuit. The verifying circuit verifies a first threshold voltage of the memory cell when the driving circuit drives the memory cell. The verifying circuit also verifies a second threshold voltage when the driving circuit does not drive the memory cell.

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IEEE “Transactions on Electron Devices.” vol. 48, No. 9, Sep. 2001, pp. 2032-2042.

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