Method of forming a high-voltage silicon controlled...

Details Method of forming a high-voltage silicon controlled... Method of forming a high-voltage silicon controlled...

2007-07-03

2007-07-03

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C257S355000

Reexamination Certificate

active

11134911

ABSTRACT:
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.

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Julian Z. Chen, Ajith Amerasekera and Tom Vrotsos, “Bipolar SCR ESD Protection Circuit For High Speed Submicron Bipolar/BiCMOS Circuits”, IEDM, pp. 337-340, (14.1.1-14.1.4), 1995, IEEE.

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