Semiconductor substrate

Details Semiconductor substrate Semiconductor substrate

2007-05-15

2007-05-15

Crane, Sara W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000

Reexamination Certificate

active

10947354

ABSTRACT:
The present invention relates to a preferred semiconductor substrate for the production of devices. The semiconductor substrate is comprised of GaAs. Then, a plurality of quantum rings, which are composed of GaSb and have a substantially elliptical shape with an aspect ratio of 2 or more but 5 or less, are formed on a surface of the semiconductor substrate. These quantum rings extend along in the substantially same direction. In a case where a light beam is irradiated onto the surface of the semiconductor substrate, among the polarized components of the irradiated light, one polarized component parallel to the long-axis direction of the ellipse that is an extending direction of each quantum ring is reflected, while another polarized component parallel to the short-axis direction thereof is transmitted. That is, the semiconductor substrate reflects one polarized component, and transmits the other polarized component. A conventional semiconductor substrate having quantum rings of a substantially true circle shape with an aspect ratio of nearly 1 could not achieve the above separation of the polarized components. Therefore, the semiconductor substrate according to the present invention is preferred to the application to polarizing devices which was difficult in the conventional substrate.

REFERENCES:
patent: 5463518 (1995-10-01), Otomo et al.
patent: 7042004 (2006-05-01), Magnus et al.
Raz, T., et al., “Formation of InAs self-assembled quantum rings on InP”, Applied Physics Letters, vol. 82, No. 11, Mar. 17, 2003, pp. 1706-1708.
Granados, D., et al., “In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy”, Applied Physics Letters, vol. 82, No. 15, Apr. 14, 2003, pp. 2401-2403.
Y. Arakawa et al.,Multidimensional quantum well laser and temperature dependence of its threshold current, Appl. Phys. Let., vol. 40, 1982, pp. 939-941.
Y. Sugiyama et al.,Stacked InAs Self-Assembled Quantum Dots on(001)GaAs Grown by Molecular Beam Epitaxy, Jpn. J.Appl. Phys., vol. 35, 1996, pp. 1320-1324.
A. Lorke et al.,Spectroscopy of Nanoscopic Semiconductor Rings, Physical Review Letters, vol. 84, No. 10, Mar. 6, 2000, pp. 2223-2226.
K. Suzuki et al.,Density Control of GaSb/GaAs Self-assembled Quantum Dots(˜25nm)Grown by Molecular Beam Epitaxy, Jpn. J. Appl. Phys. vol. 37, Part 2, No. 2B, Feb. 15, 1998, pp. L-203-L-205.

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