Complementary division mask, method of producing mask, and...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S030000

Reexamination Certificate

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10885822

ABSTRACT:
A complementary division method able to suppress a pattern deformation by wet washing, having the steps of determining a definite division length able to suppress the pattern deformation when wet washing to a width and distance of a pattern that is assumed the pattern deformation over an elasticity limit is easiest given by wet washing in advance, dividing the entire line-and-space patterns at the determined division length in the longitudinal direction to divide suitably the line-and-space pattern by a simple algorithm, and further providing a method of producing a mask and program.

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patent: 1 233 443 (2002-08-01), None
Kohichi Nakayama et al.; Complementary Splitting with Stress Emulation for Stencil Masks; Conference: Photomask and Next-Generation Lithography Mask Technology X; Yokohama, Japan; Proceedings of the SPIE, vol. 5130, No. 1, Apr. 16, 2003, pp. 979-989.
Hideo Namatsu et al; Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water; Applied Physics Letters, vol. 66, No. 20, May 15, 1995, pp. 2655-2657.
I. Ashida et al.; Data processing for LEEPL mask: Splitting and placement correction; Proceedings of the SPIE—The International Society for Optical Engineering; vol. 4754, 200s, pp. 847-856; XP00235711U, 2002.
European Search Report dated Apr. 7, 2006.

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