Semiconductor integrated circuit

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365189, G11C 1300, G11C 1140

Patent

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045424853

ABSTRACT:
A semiconductor integrated circuit comprises a first MOS transistor connected at the drain to a power source terminal of a high potential power source and supplied at the gate with a predetermined voltage, a logic circuit including MOS transistors provided between the power source terminal and a circuit point at a potential and operating in a potential range between the high potential and the circuit point, and a circuit for making the potential at the circuit point coincide with the potential at the source of the first MOS transistor.

REFERENCES:
patent: 4094012 (1978-06-01), Perlegos et al.
patent: 4096584 (1978-06-01), Owen, III et al.

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