Interconnect structure for power transistors

Details Interconnect structure for power transistors Interconnect structure for power transistors

2007-09-04

2007-09-04

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S774000, C257S748000, C257SE23144, C257SE23152, C257SE27105

Reexamination Certificate

active

10765474

ABSTRACT:
An integrated circuit according to the present invention includes first, second and third plane-like metal layers. A first transistor has a first control terminal and first and second terminals. The second terminal communicates with the first plane-like metal layer. The first terminal communicates with the second plane-like metal layer. A second transistor has a second control terminal and third and fourth terminals. The third terminal communicates with the first plane-like metal layer. The fourth terminal communicates with the third plane-like metal layer. A fourth plane-like metal layer includes first, second and third contact portions that are electrically isolated from each other and that are connected to the second plane-like metal layer, the first plane-like metal layer and the third plane-like metal layer, respectively.

REFERENCES:
patent: 6051884 (2000-04-01), Papadas et al.
patent: 6100591 (2000-08-01), Ishii
patent: 6178082 (2001-01-01), Farooq
patent: 6448510 (2002-09-01), Neftin et al.
patent: 6477034 (2002-11-01), Chakravorty
patent: 6486557 (2002-11-01), Davis et al.
patent: 2001/0045670 (2001-11-01), Nojiri
patent: 2002/0076851 (2002-06-01), Eden et al.
patent: 2002/0153609 (2002-10-01), Kaneko et al.
patent: 0 867 929 (1998-09-01), None
patent: 1 107 313 (2001-06-01), None
patent: WO98/53499 (1998-11-01), None
patent: WO 00/31797 (2000-06-01), None
patent: WO 00/31797 (2000-06-01), None
Communication from the European Patent Office dated Feb. 22, 2006 for Application No. 050002849—2203.
Communication from the European Patent Office dated Nov. 14, 2006 with the extended European Search Report for Application No. 06011395.8—2203, 7 pages.
Communication from the European Patent Office dated Nov. 14, 2006 with the extended European Search Report for Application No. 06011396.6—2203, 6 pages.

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