Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-09-04

2007-09-04

Hassanzadeh, Parviz (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

Reexamination Certificate

active

10682229

ABSTRACT:
A method of manufacturing a semiconductor device comprises, in patterning of a conductive film having a grain boundary on a very thin dielectric film, a first etching step of carrying out anisotropic etching until most of the conductive film in a flat portion disappears, and a second etching step of increasing a selective ratio to the dielectric film to etch the conductive film in an unnecessary portion such that a thickness of the dielectric film provided under the grain boundary can be held to prevent oxidation species from reaching an interface with a substrate after the first etching step.

REFERENCES:
patent: 4789426 (1988-12-01), Pipkin
patent: 5466636 (1995-11-01), Cronin et al.
patent: 5804088 (1998-09-01), McKee
patent: 5948703 (1999-09-01), Shen et al.
patent: 6380031 (2002-04-01), Mehrad et al.
patent: 6551941 (2003-04-01), Yang et al.
patent: 6651678 (2003-11-01), Shintani et al.
patent: 6703269 (2004-03-01), Brown et al.
patent: 9-69511 (1997-03-01), None
patent: 11-220123 (1999-08-01), None
patent: 11-260799 (1999-09-01), None
patent: 2001-7085 (2001-01-01), None
patent: 2001-007085 (2001-01-01), None
patent: 2002-043284 (2002-02-01), None
patent: 2002-43284 (2002-02-01), None
patent: 2003-151954 (2003-05-01), None
Nomura, et al., Formation of Very Thin Silicon Oxide Film and Interface Evaluating Technique, Realize Co., Ltd., or N. Cabrera, et al., Rep. Prog. Phys., 12, 163 (1949).

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