Non-volatile memory element having memory gate and control...

Details Non-volatile memory element having memory gate and control... Non-volatile memory element having memory gate and control...

2007-04-17

2007-04-17

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S063000

Reexamination Certificate

active

11054389

ABSTRACT:
A memory element structured so as to reduce the size and improve reliability such that a memory gate and control gate are adjacent to each other. The side of a memory gate115in contact with a control gate126is formed by etching back. This side has a circular arc-shaped curve and is convex towards the control gate126. By doing this, a short circuit between the electrodes created by the occurrence of a thin film part in an HTO film108can be suppressed.

REFERENCES:
patent: 6677214 (2004-01-01), Shindo et al.
patent: 2002/0141237 (2002-10-01), Goda et al.
patent: P2001-57394 (2001-02-01), None
Matsuzaki, N., et al., “A 0. 18-μm Embedded MNOS-Type Non-volatile Memory for High-Frequency and Low-Voltage Operation”, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, pp. 204-205 (2003).

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