Semiconductor devices of multi-emitter type

Details Semiconductor devices of multi-emitter type Semiconductor devices of multi-emitter type

1984-06-18

1985-09-17

Edlow, Martin H.

357 68, 357 56, H01L 2974

Patent

active

045423989

ABSTRACT:
A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.

REFERENCES:
patent: 4079409 (1978-03-01), Rathmann
patent: 4155155 (1979-05-01), Bourdon
patent: 4352118 (1982-09-01), Temple
patent: 4403242 (1983-09-01), Tsuruoka
patent: 4404580 (1983-09-01), Konishi

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