Image sensing device

Details Image sensing device Image sensing device

1988-02-17

1989-09-19

Wojciechowicz, Edward J.

357 2, 357 30, 357 58, 357 59, H01L 2714

Patent

active

048686239

ABSTRACT:
An amorphous silicon thin-film p-i-n photodiode array image sensor structure is provided which avoids excessive leakage currents caused by contamination of the side-walls of anisotropically etched amorphous silicon film with conducting materials, such as metal or metal silicide, during fabrication. The present image sensor structure includes a deposited SiO.sub.2 layer that separates all exposed silicon side-walls from directly underlying conductors.

REFERENCES:
patent: 4581620 (1986-04-01), Yamazaki et al.

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