Process for producing a mask on a substrate

Details Process for producing a mask on a substrate Process for producing a mask on a substrate

2007-04-17

2007-04-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C216S041000

Reexamination Certificate

active

11173171

ABSTRACT:
To produce a mask, a first mask layer (40) is applied to the substrate (10). During or after the deposition of the first mask layer (40), the latter is exposed to an etching step. The etching step is carried out in such a manner that the material of the first mask layer (40) that has been deposited on side flanks (30) of the raised structure (20) is completely removed from the side flanks (30) or is at least in sections completely removed from the side flanks (30). A second mask layer (50) is applied to the first mask layer and to the uncovered side flank sections (150) of the raised structure (20). Then, the first and second mask layers can be patterned so as to complete the mask (60).

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Liu W., et al., “Generating Sub-30nm Poly-Silicon Gates Using PECVD Amorphous Carbon as Hardmask and Anti-Reflective Coating,” Proceedings of SPIE, 2003; vol. 5040(1), pp. 841-848.

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