Input protection circuit

Details Input protection circuit Input protection circuit

1988-03-11

1989-09-19

LaRoche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072001, 361 91, 357 13, H01L 2990, H01L 2978, H02H 904

Patent

active

048686212

ABSTRACT:
An input protection circuit for prevention of electrostatic breakdown is provided. This circuit comprises, on a semiconductor substrate of a first conductivity type, a heavily doped region of a second conductivity type connected to an input terminal and a heavily doped region of the first conductivity type so that they are in contact with each other. This circuit may further include another heavily doped region of the second conductivity type connected to the ground level with it being opposite to the heavily doped region of the second conductivity type provided in the above-mentioned elementary circuit configuration. Thus, the p-n junction comprising heavily doped regions is formed to thereby lower the junction breakdown voltage when a breakdown due to an input of a high potential occurs, resulting in an increased electrostatic withstand voltage.

REFERENCES:
patent: 4449158 (1984-05-01), Taira

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