Method of fabricating optoelectronic integrated circuit chip

Details Method of fabricating optoelectronic integrated circuit chip Method of fabricating optoelectronic integrated circuit chip

2007-09-04

2007-09-04

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21387

Reexamination Certificate

active

11012699

ABSTRACT:
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

REFERENCES:
patent: 2003/0222265 (2003-12-01), Nam et al.
patent: 100243659 (1999-11-01), None
K. Takahata, et al.; “10-Gb/s Two-Channel Monolithic Photoreceiver Array Using Waveguide p-i-n PD's and HEMT's”; IEEE Photonics Technology Letters, vol. 8, No. 4; Apr. 1996.
S. Chandrasekhar, et al.; “A 10 Gbit/s OIEC Photoreceiver Using InP/InGaAs Heterjunction Bipolar Transistors”; Electronics Letters, vol. 28, No. 5; Feb. 1992.

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