Magnetoresistive random-access memory device

Details Magnetoresistive random-access memory device Magnetoresistive random-access memory device

2007-01-16

2007-01-16

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000, C257S295000, C257S425000, C257SE43004

Reexamination Certificate

active

10518391

ABSTRACT:
Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.

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