Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-07-03

2007-07-03

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257SE29143

Reexamination Certificate

active

10971098

ABSTRACT:
A semiconductor device of the present invention comprises a Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity and at least one ohmic electrode formed on the Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity. The ohmic electrode is formed of a conductive material containing a metal boride.

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