Method of writing to MRAM devices

Details Method of writing to MRAM devices Method of writing to MRAM devices

2007-05-15

2007-05-15

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S171000

Reexamination Certificate

active

11097495

ABSTRACT:
A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6683806 (2004-01-01), Drewes
patent: 7054186 (2006-05-01), Iwata
patent: 7095646 (2006-08-01), Slaughter et al.
patent: 2003-91987 (2003-03-01), None

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