Imaging sensor using asymmetric transfer transistor

Details Imaging sensor using asymmetric transfer transistor Imaging sensor using asymmetric transfer transistor

2006-12-05

2006-12-05

Le, Que T. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC, C250S214100

Reexamination Certificate

active

07145122

ABSTRACT:
The present disclosure introduces a simple method for reducing the capacitance of the floating diffusion node of a CMOS image sensor and consequently improving the image sensor's sensitivity. While reducing parasitic capacitances such as the capacitance between the transfer gate and the floating node, the proposed device layouts, in which the channel width of the detection section is different from the channel width of the photoelectric conversion element, demand no more than what is required for the fabrication of the traditional layouts.

REFERENCES:
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patent: 6617625 (2003-09-01), Miyagawa
patent: 2001/0054713 (2001-12-01), Miyagawa
patent: 2003/0127666 (2003-07-01), Lee
patent: 62-296463 (1987-12-01), None
patent: 09326482 (1997-12-01), None
patent: 2003234496 (2003-08-01), None
European Search Report App. No. EP 05 25 1953; OmniVision Technologies, Inc.; dated Sep. 28, 2005; 2 pages.

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