Overvoltage protection device and manufacturing process for...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...

Reexamination Certificate

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C257S355000

Reexamination Certificate

active

07129144

ABSTRACT:
An overvoltage protection device has a voltage-limiting region parallel to its central junction to produce a transverse junction breakdown. The spacing between the voltage-limiting region and the central junction defines the breakdown voltage. Via varying the size and location of the voltage-limiting region, the protection device can has various-breakdown voltages and lower breakover currents. Thereby, the sensitivity of the protection device can be improved.

REFERENCES:
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5001537 (1991-03-01), Colman et al.
patent: 5516705 (1996-05-01), Webb et al.
patent: 5981322 (1999-11-01), Keeth et al.
patent: 6372590 (2002-04-01), Nayak et al.

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