Testing method and structure for leakage current characterizatio

Details Testing method and structure for leakage current characterizatio Testing method and structure for leakage current characterizatio

1982-12-30

1985-09-17

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

29574, 324 73R, 324158D, 324158T, G01R 3126, G01R 3100

Patent

active

045423407

ABSTRACT:
A testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells; the testing structure includes two large gate-controlled diodes, each diode having a diffused junction which is substantially identical with that of the other diode, the gates of the diodes having different perimeter-to-area ratios, such that when testing is carried out, the leakage current components due to the contribution of the thin oxide area can be isolated from the perimeter-contributed components of the isolating thick oxide; dynamic testing can also be performed and, because of the small area for the test site, an "on chip" amplifier can be provided at the site.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3811076 (1974-05-01), Smith, Jr.
Beilstein, et al.; "Monitor Circuit . . . "; IBM Tech. Dis. Bull.; vol. 19; Aug. 1976; pp. 1000-10001.
Grove, A. S.; Physics and Technology of Semiconductor Devices; John Wiley & Sons, Inc.; 1967; pp. 289-315.

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