Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-10-24
2006-10-24
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S759000, C438S781000, C438S790000
Reexamination Certificate
active
07126208
ABSTRACT:
Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being:in-line-formulae description="In-line Formulae" end="lead"?(R1)aSi(R2)4-a (1)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?(R3)bSi(R4)4-b (2)in-line-formulae description="In-line Formulae" end="tail"?Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
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Hamada Yoshitaka
Iwabuchi Motoaki
Nakagawa Hideo
Sasago Masaru
Yagihashi Fujio
Alston & Bird LLP
Quach T. N.
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