Physical vapor deposition targets and methods of formation

Details Physical vapor deposition targets and methods of formation Physical vapor deposition targets and methods of formation

2006-12-26

2006-12-26

Mai, Ngoclan T. (Department: 1742)

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Metal and nonmetal in final product

C419S047000, C419S048000, C075S228000, C428S546000

Reexamination Certificate

active

07153468

ABSTRACT:
A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise SE and the second material can comprise Ge and/or Ag. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particles sizes no greater than about 325 mesh.

REFERENCES:
patent: 4205098 (1980-05-01), Kobayashi et al.
patent: 4619697 (1986-10-01), Hijikata et al.
patent: 4663120 (1987-05-01), Parent et al.
patent: 4752335 (1988-06-01), Korb
patent: 4767695 (1988-08-01), Ong et al.
patent: 4943362 (1990-07-01), Schlamp et al.
patent: 5215639 (1993-06-01), Boys
patent: 5320729 (1994-06-01), Narizuka et al.
patent: 5342571 (1994-08-01), Dittmar et al.
patent: 5409517 (1995-04-01), Satou et al.
patent: 5435965 (1995-07-01), Mashima et al.
patent: 5439500 (1995-08-01), Marx
patent: 5447801 (1995-09-01), Masuda et al.
patent: 5480531 (1996-01-01), Weigert et al.
patent: 5733427 (1998-03-01), Satou et al.
patent: 5736657 (1998-04-01), Ide et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5762768 (1998-06-01), Goy et al.
patent: 5807443 (1998-09-01), Masuda et al.
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5906717 (1999-05-01), Hasegawa et al.
patent: 5985691 (1999-11-01), Basol et al.
patent: 6165413 (2000-12-01), Lo et al.
patent: 6214177 (2001-04-01), Runkle
patent: 6248291 (2001-06-01), Nakagama et al.
patent: 6562207 (2003-05-01), Ivanov
patent: 0308201 (1989-03-01), None
patent: 0387898 (1990-09-01), None
patent: 59223245 (1988-08-01), None
patent: 4061124 (1992-02-01), None
patent: 5-132772 (1993-05-01), None
patent: 8306485 (1996-11-01), None
patent: 10060636 (1998-03-01), None

Affiliated with

Also associated with

Rating

Physical vapor deposition targets and methods of formation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Physical vapor deposition targets and methods of formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Physical vapor deposition targets and methods of formation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3716309