Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-10-17
2006-10-17
Menefee, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C257S025000, C257S104000
Reexamination Certificate
active
07123638
ABSTRACT:
A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
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Chamberlin Danielle R.
Chang Ying-Lan
Leary Michael Howard
Mars Danny E.
Roh Sungwon David
Avago Technologies General IP ( Singapore) Pte. Ltd.
Menefee James
Nguyen Phillip
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