Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-01

2006-08-01

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S712000, C438S108000

Reexamination Certificate

active

07084005

ABSTRACT:
The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

REFERENCES:
patent: 5646446 (1997-07-01), Nicewarner, Jr. et al.
patent: 6392143 (2002-05-01), Koshio

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