Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-10-03
2006-10-03
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603070, C029S603130, C029S603140, C029S603160, C029S603180, C216S022000, C216S048000, C216S065000, C360S316000, C360S324110, C360S324120, C360S324200, C427S127000, C427S128000, C451S005000, C451S041000
Reexamination Certificate
active
07114240
ABSTRACT:
In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 5569617 (1996-10-01), Yeh et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6048739 (2000-04-01), Hurst et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6165803 (2000-12-01), Chen et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6392922 (2002-05-01), Liu et al.
patent: 6500676 (2002-12-01), Ramberg
patent: 6872997 (2005-03-01), Liu et al.
patent: 2002/0080645 (2002-06-01), Liu et al.
patent: 2002/0085412 (2002-07-01), Liu et al.
patent: 1 033 764 (2000-03-01), None
“Dual layer overcoat for MR recording media”; Ga-Lane Chen; Junhoa Wu; Weiss, J.; Magnetics, IEEE Transactions on vol. 35, Issue 5, Part 1; Sep. 1999; pp. 2364-2366.
Geppert, “The New Indelible Memories,” IEEE Spectrum Mar. 2003.
Baseman Daniel L.
Berg Lonny L.
Katti Romney R.
Reed Daniel S.
Shaw Gordon A.
Honeywell International , Inc.
Kim Paul D.
McDonnell Boehnen & Hulbert & Berghoff LLP
LandOfFree
Method for fabricating giant magnetoresistive (GMR) devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating giant magnetoresistive (GMR) devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating giant magnetoresistive (GMR) devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3710978