Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Making plural bipolar transistors of differing electrical...
Reexamination Certificate
2006-12-05
2006-12-05
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Making plural bipolar transistors of differing electrical...
C438S309000
Reexamination Certificate
active
07144789
ABSTRACT:
In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions20, 14by epitaxial deposition of crystalline silicon-germanium layers32a,36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers32a, 36acan be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers32a, 36a.
REFERENCES:
patent: 5930635 (1999-07-01), Bashir et al.
patent: 6346453 (2002-02-01), Kovacic et al.
patent: 6472288 (2002-10-01), Freeman et al.
Balster Scott
El-Kareh Badih
Scharnagl Thomas
Schiekofer Manfred
Steinmann Philipp
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Vu David
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