Nonvolatile memory device capable of preventing over-erasure...

Details Nonvolatile memory device capable of preventing over-erasure... Nonvolatile memory device capable of preventing over-erasure...

2006-02-07

2006-02-07

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185280, C365S185260, C365S185020, C365S185200, C365S185180, C365S185030

Reexamination Certificate

active

06996012

ABSTRACT:
A non-volatile memory device and a method for driving the same prevent an excessive electron erasing phenomenon without additional components. Each memory cell includes a tunnel oxide layer, a floating gate, a control gate connected to a word line, first and second oxide layers formed between the floating gate and the control gate, and first and second impurity diffusion layers formed in a semiconductor substrate at both sides of the floating gate and connected to a common line and a bit line.

REFERENCES:
patent: 5455793 (1995-10-01), Amin et al.
patent: 6413819 (2002-07-01), Zafar et al.

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