Manufacturing a complementary MOSFET

Details Manufacturing a complementary MOSFET Manufacturing a complementary MOSFET

Filed on

1984-09-17

Date issued

1986-11-11

Examiner

Ozaki, George T.

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Assembling or joining

Other Related Categories

29577C, 29578, 29576B, 148187, H01L 21425

Type

Patent

Status

active

Patent number

046214127

Description

ABSTRACT:
A manufacturing method of a semiconductor device is disclosed which includes the steps of forming oxide layers on a major surface of a substrate at first and second portions, forming first and second semiconductor layers, each having predetermined conductivity types and with predetermined patterns on the oxide layers of the first and second portions, forming a first region by introducing an impurity of the first conductivity type into the substrate while using the first semiconductor layer as a mask, etching out the oxide layer on the second portion by using the second semiconductor layer as a mask, forming a second region by introducing an impurity of the second conductivity type into the substrate while using the second semiconductor layer as a mask, and forming oxide layers on the surfaces of the first semiconductor layer, the second semiconductor layer and the second region by a thermal oxidization process.

REFERENCES:
patent: 4295897 (1981-10-01), Tubbs et al.
patent: 4313768 (1982-02-01), Sanders et al.
patent: 4355454 (1982-10-01), Tasch et al.
patent: 4385827 (1983-05-01), Romano-Moran et al.
patent: 4385947 (1983-05-01), Halfacre et al.
patent: 4422885 (1983-12-01), Brower et al.
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4450021 (1984-05-01), Batra et al.
patent: 4459740 (1984-07-01), Schwabe et al.
patent: 4462151 (1984-07-01), Geipel et al.
patent: 4470852 (1984-09-01), Ellsworth
patent: 4530150 (1985-07-01), Shirato

Affiliated with

Also associated with

Rating

Manufacturing a complementary MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing a complementary MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing a complementary MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-370924