Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-08
2006-08-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S682000
Reexamination Certificate
active
07087999
ABSTRACT:
A semiconductor protection element is provided in which no heat generation occurs in a concentrated manner, in a region having a high resistance value even when electrostatic discharge (ESD) is applied, without an increase in an area of the semiconductor device. The semiconductor protection element is made up of an N-type well, P-type semiconductor substrate having a pair of N+diffusion layers each having an impurity concentration being higher than that of the N-type well, and a silicide layer partially formed on each of the two N+diffusion layers. The N-type well has a first exposed region being exposed on the semiconductor substrate and the silicide layer is so formed that a part of each of the two N+diffusion layers has a second exposed region being exposed successively so as to be in contact with the first exposed region. The first exposed region is sandwiched by two N+diffusion layers.
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Lee Calvin
NEC Electronics Corporation
Nelms David
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