Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-08
2006-08-08
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE29070, C977S938000, C977S943000, C977S762000
Reexamination Certificate
active
07087920
ABSTRACT:
A nanowire includes a single crystalline semiconductor material having an exterior surface and an interior region and at least one dopant atom. At least a portion of the nanowire thermally switches between two conductance states; a high conductance state, where a high fraction of the dopant atoms is in the interior region, and a low conductance state, where a lower fraction of the dopant atoms is at the interior region and a higher fraction of the atoms is at the exterior surface. A method to select the conductance of the nanowire increases a temperature of the nanowire at least in a local region to a programming temperature to thermally activate diffusion of a dopant atom into a bulk region of the single crystalline semiconductor material and decreases the temperature of the nanowire at least in the local region to a second temperature to immobilize dopant atoms in the bulk region, the second temperature being below the programming temperature, wherein immobilized dopant atoms in the bulk region produce a desired high or low conductance state in the nanowire. The method can be used to initially configure and to reconfigure a circuit incorporating the nanowire.
REFERENCES:
Chiu, P.W.; Gu, G.; Kim, G.T.; Philipp, G.; Roth, S.; Yang, S.F.; Yang, S., Temperature-induced change from p to n conduction in metallofullerene nanotube peapods, Dec. 3, 2001, American Institute of Physics, Applied Physics Letters vol. 79, No. 23, p. 3845-7.
M. Saif Islam et al., Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces, Nanotechnology 15, 2004 IOP Publishing Ltd., pp. L5-L8.
J.F. Nutzel et al., Segregation and difusion on semiconductor surfaces, Physical Review B, May 15, 1996-II, The American Physical Society, vol. 53, No. 20, pp. 13 551-13 558.
Liu Benjamin Tzu-Hung
Tran Minhloan
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