Method of controlling implant dosage and pressure...

Details Method of controlling implant dosage and pressure... Method of controlling implant dosage and pressure...

2006-06-06

2006-06-06

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S400000, C250S492230, C250S492300

Reexamination Certificate

active

07057191

ABSTRACT:
A method of controlling the implant dosage is provided. First, the residual gases within an ion implant station are analyzed and the partial pressure of each residual gas is measured. Thereafter, the current Im of the ion beam is measured and the real dosage Ir of the ion beam implanted into a wafer is calculated. Since all the residual gases in the ion implant station are considered, the implanting dosage can be accurately controlled.

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