Method of producing silicon-germanium-on-insulator material...

Details Method of producing silicon-germanium-on-insulator material... Method of producing silicon-germanium-on-insulator material...

2006-11-28

2006-11-28

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S102000, C117S105000

Reexamination Certificate

active

07141115

ABSTRACT:
A method of fabricating a high-quality relaxed SiGe-on-insulator substrate material is provided in which a prefabricated silicon-on-insulator substrate is first exposed to an unstrained Ge-containing source and then heated (annealed/oxidized) to cause Ge diffusion and thermal mixing of Ge within a single-crystal Si-containing layer of the prefabricated silicon-on-insulator substrate. The unstrained Ge-containing source can comprise a solid Ge-containing source, a gaseous Ge-containing source, or ions of Ge.

REFERENCES:
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6855436 (2005-02-01), Bedell et al.

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