RF power amplifier

Details RF power amplifier RF power amplifier

2006-12-26

2006-12-26

Mottola, Steven J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

Reexamination Certificate

active

07154339

ABSTRACT:
An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1to Rb,1,N) for the output transistors (HBT,1,1to HBT,1,N) and a plurality of input capacitors (Cb,1to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1to HBT,1,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,1,1to HBT,1,N). The transistors (HBT,1,1to HBT,1,N) are heterojunction bipolar transistors.

REFERENCES:
patent: 5276406 (1994-01-01), Samay et al.
patent: 5629648 (1997-05-01), Pratt

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