NAND-type non-volatile memory cell and method for operating...

Details NAND-type non-volatile memory cell and method for operating... NAND-type non-volatile memory cell and method for operating...

2006-02-07

2006-02-07

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170

Reexamination Certificate

active

06996011

ABSTRACT:
A NAND-type erasable programmable read only memory (EEPROM) device formed of a number of substantially identical EEPROM cells with each EEPROM cell being capable of storing two bits of information. A simple method for operating the memory comprises erasing, programming, and reading the device.

REFERENCES:
patent: 5982667 (1999-11-01), Jyouno et al.
patent: 6064591 (2000-05-01), Takeuchi et al.
patent: 6078519 (2000-06-01), Kanamitsu et al.
patent: 6097624 (2000-08-01), Chung et al.
patent: 6178115 (2001-01-01), Shibata et al.
patent: 6243290 (2001-06-01), Kurata et al.
patent: 6370062 (2002-04-01), Choi
patent: 6434055 (2002-08-01), Tanaka et al.
patent: 6456528 (2002-09-01), Chen
patent: 6721204 (2004-04-01), Yeh et al.
patent: 6738293 (2004-05-01), Iwahashi
patent: 6867463 (2005-03-01), Chang

Affiliated with

Also associated with

Rating

NAND-type non-volatile memory cell and method for operating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND-type non-volatile memory cell and method for operating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND-type non-volatile memory cell and method for operating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3692203