Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-12-05
2006-12-05
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S096000, C257SE25032, C257SE31105, C372S046010
Reexamination Certificate
active
07145183
ABSTRACT:
The invention is directed to a vertically emitting laser and a method of manufacturing such a laser having a current aperture and a semiconductor relief. The semiconductor relief and the current aperture are defined in the same processing operation, thereby causing the semiconductor relief and the current aperture to be substantially self-aligned with respect to one another. In addition, such processing results in an area ratio of the semiconductor relief and the current aperture to be substantially self-scaling with respect to processing variations.
REFERENCES:
patent: 6906353 (2005-06-01), Shieh et al.
patent: 2003/0235226 (2003-12-01), Ueki
patent: 2005/0031005 (2005-02-01), Cheng et al.
“Transverse Mode Selection in Large-Area Oxide-Confined Vertical-Cavity Surface-Emitting Lasers Using a Shallow Surface Relief”, H. Martinsson, J.A. Vukusic, M. Grabherr, M. Michalzik, R. Jäger, K.J. Ebeling, and A. Larsson, IEEE Photonics Technology Letter, vol. 11, No. 12, Dec. 1999, pp. 1536-1538.
“Increased-area oxidized single-fundamental mode VCSEL with self-aligned shallow etched surface relief”, H.J. Unold, M. Grabherr, F. Eberhard, F. Mederer, R. Jäger, M. Riedl, and K.J. Ebeling, Electronics Letters, Aug. 5, 1999, vol. 35, No. 16, pp. 1340-1341.
Eschweiler & Associates LLC
Infineon - Technologies AG
Sarkar Asok Kumar
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