Light-emitting diode and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S079000, C257S098000

Reexamination Certificate

active

07126163

ABSTRACT:
The present invention provides a surface-mounted LED that is easy to be made thin and having high reliability, as well as provides its manufacturing method.Specifically, the present invention provides a light-emitting diode having a light-emitting diode chip mounted on a surface of a printed substrate, this light-emitting diode chip comprising a substrate; a semiconductor layer laminated on the substrate and comprising an N-type semiconductor layer and a P-type semiconductor layer, wherein its PN junction surface is perpendicular to the surface of the printed substrate and a portion in the vicinity of the PN junction surface is rendered to be a light-emitting portion; a pair of electrodes that applies voltage to the semiconductor layer; and a light reflecting layer formed on the front surface or back surface of the light-emitting chip or in the chip so as to be approximately parallel to the PN junction surface, this light reflecting layer reflecting light emitted from the light-emitting portion.

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